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HN1C01FE-Y,LF
Opis:
HN1C01FE-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
HN1C01FE-Y,LF
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
HN1C01FE-Y,LF More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.31
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Schedule B:
8541210080
Max Breakdown Voltage:
50 V
Max Power Dissipation:
100 mW
Collector Emitter Breakdown Voltage:
50 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Arrays
Qty:
3267 In Stock
Applications:
TV
Power delivery
Packaging:
Cut Tape (CT)
Transition Frequency:
80 MHz
Max Collector Current:
150 mA
Collector Emitter Voltage (VCEO):
250 mV
Numer modelu:
HN1C01FE-Y, LF
Wprowadzenie
HN1C01FE-Y,LF Overview\\\\nHN1C01FE-Y,LF is a model belonging to the Transistors - Bipolar (BJT) - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have HN1C01FE-Y,LF high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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