english
français
Deutsch
Italiano
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
55GN01FA-TL-H
Opis:
55GN01FA-TL-H datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Rochester Electronics stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
55GN01FA-TL-H
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
55GN01FA-TL-H More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.10
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
19 dB
Frequency:
5.5 GHz
Case/Package:
SC
Power Dissipation:
250 mW
Transition Frequency:
5.5 GHz
Max Power Dissipation:
250 mW
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
20 V
Collector Emitter Breakdown Voltage:
10 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
4026 In Stock
Applications:
Infotainment & cluster
Home theater & entertainment
Power delivery
Polarity:
NPN
Packaging:
Tape & Reel (TR)
Number of Pins:
3
Number of Elements:
1
Max Collector Current:
70 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
3 V
Collector Emitter Voltage (VCEO):
10 V
Numer modelu:
55GN01FA-TL-H
Wprowadzenie
55GN01FA-TL-H Overview\\\\n55GN01FA-TL-H is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 55GN01FA-TL-H high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
Wyślij zapytanie ofertowe
Akcje:
MOQ: