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BF776H6327XTSA1
Opis:
BF776H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from IR (Infineon Technologies) stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
BF776H6327XTSA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BF776H6327XTSA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.50
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Gain:
24 dB
Height:
1 mm
Frequency:
40 GHz
Case/Package:
SOT-343
Power Dissipation:
200 mW
Transition Frequency:
46 GHz
Max Collector Current:
50 mA
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
1.2 V
Max Junction Temperature (Tj):
150 °C
Collector Emitter Voltage (VCEO):
4 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - RF
Qty:
3080 In Stock
Applications:
Wired networking
Enterprise machine
Body electronics & lighting
Mount:
Surface Mount
Polarity:
NPN
Packaging:
Cut Tape (CT)
Contact Plating:
Tin
Number of Elements:
1
Max Breakdown Voltage:
4.7 V
Max Power Dissipation:
200 mW
Min Operating Temperature:
-65 °C
Collector Base Voltage (VCBO):
13 V
Ambient Temperature Range High:
150 °C
Collector Emitter Breakdown Voltage:
4.7 V
Numer modelu:
BF776H6327XTSA1
Wprowadzenie
BF776H6327XTSA1 Overview\\\\nBF776H6327XTSA1 is a model belonging to the Transistors - Bipolar (BJT) - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BF776H6327XTSA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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