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NE4210S01-T1B
Opis:
NE4210S01-T1B datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Rochester Electronics stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
NE4210S01-T1B
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NE4210S01-T1B More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.26
Remark:
Manufacturer: Rochester Electronics.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Case/Package:
SO
Power Dissipation:
165 mW
Min Operating Temperature:
-65 °C
Continuous Drain Current (ID):
70 mA
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - RF
Qty:
9952 In Stock
Applications:
Industrial transport (non-car & non-light truck)
Wearables (non-medical)
Wireless infrastructure
Packaging:
Tape and Reel
Number of Pins:
4
Max Operating Temperature:
125 °C
Gate to Source Voltage (Vgs):
3 V
Drain to Source Breakdown Voltage:
4 V
Numer modelu:
NE4210S01-T1B
Wprowadzenie
NE4210S01-T1B Overview\\\\nNE4210S01-T1B is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NE4210S01-T1B high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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