logo

BLF6G20LS-110,112

Opis:
BLF6G20LS-110,112 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Rochester Electronics stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
BLF6G20LS-110,112
Manufacturer:
Rochester Electronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
BLF6G20LS-110,112 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$77.55
Remark:
Manufacturer: Rochester Electronics. Rozee is one of the Distributors. Wide range of applications.
Gain:
19 dB
Frequency:
1.99 GHz
Test Current:
900 mA
Max Frequency:
2 GHz
Number of Pins:
3
Max Output Power:
25 W
Element Configuration:
Single
Max Operating Temperature:
225 °C
Drain to Source Resistance:
160 mΩ
Continuous Drain Current (ID):
29 A
Drain to Source Breakdown Voltage:
65 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - RF
Qty:
624 In Stock
Applications:
Body electronics & lighting Grid infrastructure
Mount:
Surface Mount
Output Power:
25 W
Test Voltage:
28 V
Current Rating:
29 A
Voltage Rating:
65 V
Number of Elements:
1
Min Breakdown Voltage:
28 V
Min Operating Temperature:
-65 °C
Gate to Source Voltage (Vgs):
2 V
Drain to Source Voltage (Vdss):
65 V
Numer modelu:
BLF6G20LS-110,112
Wprowadzenie
BLF6G20LS-110,112 Overview\\\\nBLF6G20LS-110,112 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G20LS-110,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensi
Wyślij zapytanie ofertowe
Akcje:
MOQ: