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MRF6S20010GNR1
Opis:
MRF6S20010GNR1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from NXP Semiconductors stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
MRF6S20010GNR1
Manufacturer:
NXP Semiconductors
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
MRF6S20010GNR1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$69.87
Remark:
Manufacturer: NXP Semiconductors.
Rozee is one of the Distributors.
Wide range of applications.
Gain:
15.5 dB
Weight:
547.996282 mg
Packaging:
Tape and Reel
Output Power:
10 W
Test Voltage:
28 V
Current Rating:
10 µA
Voltage Rating:
68 V
Number of Elements:
1
Element Configuration:
Single
Min Operating Temperature:
-65 °C
Drain to Source Voltage (Vdss):
68 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - RF
Qty:
3439 In Stock
Applications:
PC & notebooks
Connected peripherals & printers
Mount:
Surface Mount
Frequency:
2.17 GHz
Case/Package:
TO-270
Test Current:
130 mA
Max Frequency:
2.2 GHz
Number of Pins:
3
Max Output Power:
1 W
Voltage Rating (DC):
28 V
Max Operating Temperature:
225 °C
Gate to Source Voltage (Vgs):
12 V
Drain to Source Breakdown Voltage:
68 V
Numer modelu:
MRF6S20010GNR1
Wprowadzenie
MRF6S20010GNR1 Overview\\\\nMRF6S20010GNR1 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have MRF6S20010GNR1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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