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NGTB20N60L2TF1G
Opis:
NGTB20N60L2TF1G datasheet pdf and Transistors - IGBTs - Single product details from Sanyo Semiconductor/ON Semiconductor stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
NGTB20N60L2TF1G
Manufacturer:
Sanyo Semiconductor/ON Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
NGTB20N60L2TF1G More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Sanyo Semiconductor/ON Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Schedule B:
8541290080
Element Configuration:
Single
Max Power Dissipation:
64 W
Max Operating Temperature:
175 °C
Collector Emitter Voltage (VCEO):
600 V
Collector Emitter Saturation Voltage:
1.45 V
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
616 In Stock
Applications:
Wireless infrastructure
Power delivery
Home theater & entertainment
Number of Pins:
3
Max Collector Current:
40 A
Reverse Recovery Time:
70 ns
Min Operating Temperature:
-55 °C
Collector Emitter Breakdown Voltage:
600 V
Numer modelu:
NGTB20N60L2TF1G
Wprowadzenie
NGTB20N60L2TF1G Overview\\nNGTB20N60L2TF1G is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have NGTB20N60L2TF1G high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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