english
français
Deutsch
Italiano
Español
português
Nederlandse
ελληνικά
日本語
한국
العربية
हिन्दी
Türkçe
indonesia
tiếng Việt
ไทย
বাংলা
فارسی
polski
RJP60D0DPM-00#T1
Opis:
RJP60D0DPM-00#T1 datasheet pdf and Transistors - IGBTs - Single product details from Integrated Device Technology (Renesas Electronics America) stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
RJP60D0DPM-00#T1
Manufacturer:
Integrated Device Technology (Renesas Electronics America)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
RJP60D0DPM-00#T1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Integrated Device Technology (Renesas Electronics America).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Max Power Dissipation:
40 W
Collector Emitter Breakdown Voltage:
600 V
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
561 In Stock
Applications:
Appliances
Lighting
Wearables (non-medical)
Max Collector Current:
45 A
Collector Emitter Voltage (VCEO):
2.2 V
Numer modelu:
RJP60D0DPM-00#T1
Wprowadzenie
RJP60D0DPM-00#T1 Overview\\nRJP60D0DPM-00#T1 is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have RJP60D0DPM-00#T1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
Wyślij zapytanie ofertowe
Akcje:
MOQ: