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RJH60V1BDPE-00#J3
Opis:
RJH60V1BDPE-00#J3 datasheet pdf and Transistors - IGBTs - Single product details from Integrated Device Technology (Renesas Electronics America) stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
RJH60V1BDPE-00#J3
Manufacturer:
Integrated Device Technology (Renesas Electronics America)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
RJH60V1BDPE-00#J3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Integrated Device Technology (Renesas Electronics America).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Case/Package:
SC
Max Breakdown Voltage:
600 V
Max Power Dissipation:
52 W
Max Operating Temperature:
150 °C
Collector Emitter Voltage (VCEO):
2.2 V
Products Category:
Discrete Semiconductor - Transistors - IGBTs - Single
Qty:
82 In Stock
Applications:
Body electronics & lighting
Lighting
Data storage
Packaging:
Cut Tape (CT)
Number of Pins:
83
Max Collector Current:
16 A
Reverse Recovery Time:
25 ns
Min Operating Temperature:
-55 °C
Collector Emitter Breakdown Voltage:
600 V
Numer modelu:
RJH60V1BDPE-00#J3
Wprowadzenie
RJH60V1BDPE-00#J3 Overview\\nRJH60V1BDPE-00#J3 is a model belonging to the Transistors - IGBTs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have RJH60V1BDPE-00#J3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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