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2SA1930(Q,M)
Opis:
2SA1930(Q,M) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Electronic Devices and Storage Corporation stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
2SA1930(Q,M)
Manufacturer:
Toshiba Electronic Devices and Storage Corporation
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
2SA1930(Q,M) More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Toshiba Electronic Devices and Storage Corporation.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Polarity:
PNP
Case/Package:
TO-220-3
Power Dissipation:
20 W
Transition Frequency:
200 MHz
Max Collector Current:
2 A
Gain Bandwidth Product:
200 MHz
Min Operating Temperature:
-55 °C
Collector Base Voltage (VCBO):
180 V
Collector Emitter Breakdown Voltage:
180 V
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Single
Qty:
823 In Stock
Applications:
Body electronics & lighting
Medical
Gaming
hFE Min:
50
Frequency:
200 MHz
Contact Plating:
Copper, Silver, Tin
Number of Elements:
1
Element Configuration:
Single
Max Power Dissipation:
2 W
Max Operating Temperature:
150 °C
Emitter Base Voltage (VEBO):
5 V
Collector Emitter Voltage (VCEO):
180 V
Numer modelu:
2SA1930(Q,M)
Wprowadzenie
2SA1930(Q,M) Overview\\n2SA1930(Q,M) is a model belonging to the Transistors - Bipolar (BJT) - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 2SA1930(Q,M) high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. 2SA1930
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