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2SB1326TV2Q
Opis:
2SB1326TV2Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
2SB1326TV2Q
Manufacturer:
ROHM Semiconductor
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa MoneyGram Western Union
More Information:
2SB1326TV2Q More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: ROHM Semiconductor.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Through Hole
Polarity:
PNP
Voltage Rating (DC):
-20 V
Element Configuration:
Single
Max Collector Current:
700 mA
Gain Bandwidth Product:
120 MHz
Emitter Base Voltage (VEBO):
6 V
Collector Emitter Voltage (VCEO):
400 mV
Products Category:
Discrete Semiconductor - Transistors - Bipolar (BJT) - Single
Qty:
563 In Stock
Applications:
Wireless infrastructure
Factory automation & control
Home theater & entertainment
hFE Min:
120
Current Rating:
-5 A
Transition Frequency:
120 MHz
Max Breakdown Voltage:
20 V
Max Power Dissipation:
1 W
Max Operating Temperature:
150 °C
Collector Base Voltage (VCBO):
30 V
Collector Emitter Breakdown Voltage:
80 V
Numer modelu:
2SB1326TV2Q
Wprowadzenie
2SB1326TV2Q Overview\\n2SB1326TV2Q is a model belonging to the Transistors - Bipolar (BJT) - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have 2SB1326TV2Q high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. 2SB1326TV2
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