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IPG20N06S2L35AATMA1
Opis:
IPG20N06S2L35AATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from IR (Infineon Technologies) stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
IPG20N06S2L35AATMA1
Manufacturer:
IR (Infineon Technologies)
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
IPG20N06S2L35AATMA1 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.22
Remark:
Manufacturer: IR (Infineon Technologies).
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Rds On Max:
35 mΩ
Package Quantity:
5000
Power Dissipation:
65 W
On-State Resistance:
44 mΩ
Max Dual Supply Voltage:
55 V
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
55 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
2817 In Stock
Applications:
Data center & enterprise computing
Portable electronics
Medical
Packaging:
Tape & Reel
Number of Pins:
8
Input Capacitance:
790 pF
Number of Elements:
2
Max Power Dissipation:
65 W
Max Operating Temperature:
175 °C
Drain to Source Resistance:
28 mΩ
Continuous Drain Current (ID):
20 A
Numer modelu:
IPG20N06S2L35AATMA1
Wprowadzenie
IPG20N06S2L35AATMA1 Overview\\\\nIPG20N06S2L35AATMA1 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have IPG20N06S2L35AATMA1 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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