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CSD88537NDT
Opis:
CSD88537NDT datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
CSD88537NDT
Manufacturer:
Texas Instruments
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
CSD88537NDT More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$1.44
Remark:
Manufacturer: Texas Instruments.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.75 mm
Weight:
540.001716 mg
Packaging:
Tape & Reel (TR)
Thickness:
1.58 mm
Schedule B:
8541290080
Number of Pins:
8
Input Capacitance:
1.4 nF
Threshold Voltage:
3 V
Turn-On Delay Time:
6 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
12.5 mΩ
Continuous Drain Current (ID):
8 A
Drain to Source Voltage (Vdss):
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
6378 In Stock
Applications:
Gaming
Infotainment & cluster
Data center & enterprise computing
Width:
3.91 mm
Length:
4.9 mm
Fall Time:
19 ns
Rise Time:
15 ns
Rds On Max:
15 mΩ
Case/Package:
SOIC
Contact Plating:
Gold
Power Dissipation:
2.1 W
Number of Channels:
2
Turn-Off Delay Time:
5 ns
Max Power Dissipation:
2.1 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
60 V
Numer modelu:
CSD88537NDT
Wprowadzenie
CSD88537NDT Overview\\\\nCSD88537NDT is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have CSD88537NDT high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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