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SI4599DY-T1-GE3
Opis:
SI4599DY-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
SI4599DY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI4599DY-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.91
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.55 mm
Weight:
540.001716 mg
Packaging:
Cut Tape
Rds On Max:
35.5 mΩ
Schedule B:
8541290080
Number of Pins:
8
Input Capacitance:
640 pF
Threshold Voltage:
1.4 V
Number of Elements:
2
Turn-Off Delay Time:
30 ns
Max Operating Temperature:
150 °C
Drain to Source Resistance:
37 mΩ
Continuous Drain Current (ID):
6.8 A
Drain to Source Voltage (Vdss):
40 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
4837 In Stock
Applications:
Portable electronics
Data center & enterprise computing
Width:
4 mm
Length:
5 mm
Fall Time:
13 ns
Rise Time:
33 ns
Resistance:
45 mΩ
Case/Package:
SOIC
Contact Plating:
Tin
Power Dissipation:
2 W
Number of Channels:
2
Turn-On Delay Time:
44 ns
Max Power Dissipation:
3.1 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
40 V
Numer modelu:
SI4599DY-T1-GE3
Wprowadzenie
SI4599DY-T1-GE3 Overview\\\\nSI4599DY-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI4599DY-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
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