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SI1967DH-T1-GE3
Opis:
SI1967DH-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
SI1967DH-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI1967DH-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.42
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Weight:
28.009329 mg
Rise Time:
27 ns
Resistance:
490 MΩ
Case/Package:
SOT-363
Input Capacitance:
110 pF
Threshold Voltage:
-1 V
Number of Elements:
2
Turn-Off Delay Time:
12 ns
Max Power Dissipation:
1.25 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
8 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
-20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
889 In Stock
Applications:
Test & measurement
Tablets
Aerospace & defense
Height:
1.1 mm
Fall Time:
10 ns
Rds On Max:
490 mΩ
Schedule B:
8541210080
Number of Pins:
6
Power Dissipation:
740 mW
Number of Channels:
2
Turn-On Delay Time:
2 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
390 mΩ
Continuous Drain Current (ID):
-1 A
Drain to Source Voltage (Vdss):
-20 V
Numer modelu:
SI1967DH-T1-GE3
Wprowadzenie
SI1967DH-T1-GE3 Overview\\\\nSI1967DH-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI1967DH-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensive
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