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SI6968BEDQ-T1-GE3
Opis:
SI6968BEDQ-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay / Siliconix stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
SI6968BEDQ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI6968BEDQ-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.62
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1 mm
Weight:
157.991892 mg
Rise Time:
330 ns
Resistance:
22 MΩ
Case/Package:
TSSOP
Power Dissipation:
1 W
Number of Elements:
2
Turn-Off Delay Time:
860 ns
Max Power Dissipation:
1 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
12 V
Max Junction Temperature (Tj):
150 °C
Drain to Source Breakdown Voltage:
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Arrays
Qty:
69 In Stock
Applications:
Lighting
Portable electronics
Width:
4.4 mm
Length:
3 mm
Fall Time:
330 ns
Rds On Max:
22 mΩ
Schedule B:
8541290080
Number of Pins:
8
Number of Channels:
2
Turn-On Delay Time:
245 ns
Element Configuration:
Dual
Max Operating Temperature:
150 °C
Drain to Source Resistance:
16.5 mΩ
Continuous Drain Current (ID):
5.2 A
Drain to Source Voltage (Vdss):
20 V
Numer modelu:
SI6968BEDQ-T1-GE3
Wprowadzenie
SI6968BEDQ-T1-GE3 Overview\\\\nSI6968BEDQ-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Arrays subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI6968BEDQ-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and
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