logo

SI7102DN-T1-E3

Opis:
SI7102DN-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
SI7102DN-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI7102DN-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix. Rozee is one of the Distributors. Wide range of applications.
Mount:
Surface Mount
Height:
1.04 mm
Fall Time:
12 ns
Rise Time:
125 ns
Number of Pins:
8
Power Dissipation:
3.8 W
Number of Channels:
1
Turn-On Delay Time:
27 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
3.8 mΩ
Continuous Drain Current (ID):
25 A
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
253 In Stock
Applications:
Building automation Grid infrastructure Connected peripherals & printers
Width:
3.05 mm
Length:
3.05 mm
Packaging:
Cut Tape
Rds On Max:
3.8 mΩ
Input Capacitance:
3.72 nF
Threshold Voltage:
1 V
Number of Elements:
1
Turn-Off Delay Time:
53 ns
Max Power Dissipation:
52 W
Min Operating Temperature:
-50 °C
Gate to Source Voltage (Vgs):
8 V
Drain to Source Voltage (Vdss):
12 V
Numer modelu:
SI7102DN-T1-E3
Wprowadzenie
SI7102DN-T1-E3 Overview\\nSI7102DN-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI7102DN-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
Wyślij zapytanie ofertowe
Akcje:
MOQ: