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SIA425EDJ-T1-GE3
Opis:
SIA425EDJ-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
SIA425EDJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SIA425EDJ-T1-GE3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
750 µm
Fall Time:
10 ns
Rds On Max:
60 mΩ
Power Dissipation:
2.9 W
Max Power Dissipation:
15.6 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
12 V
Drain to Source Voltage (Vdss):
20 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
836 In Stock
Applications:
Hybrid, electric & powertrain systems
Industrial transport (non-car & non-light truck)
Enterprise projectors
Width:
2.05 mm
Length:
2.05 mm
Packaging:
Digi-Reel®
Number of Pins:
6
Number of Elements:
1
Max Operating Temperature:
150 °C
Drain to Source Resistance:
60 mΩ
Continuous Drain Current (ID):
4.5 A
Numer modelu:
SIA425EDJ-T1-GE3
Wprowadzenie
SIA425EDJ-T1-GE3 Overview\\nSIA425EDJ-T1-GE3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SIA425EDJ-T1-GE3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensiv
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