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STB30NM60N
Opis:
STB30NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
STB30NM60N
Manufacturer:
STMicroelectronics
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
STB30NM60N More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: STMicroelectronics.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Packaging:
Digi-Reel®
Rds On Max:
130 mΩ
Case/Package:
D2PAK
Input Capacitance:
2.7 nF
Turn-Off Delay Time:
125 ns
Max Power Dissipation:
190 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
30 V
Drain to Source Voltage (Vdss):
600 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
195 In Stock
Applications:
Body electronics & lighting
Industrial transport (non-car & non-light truck)
Enterprise machine
Fall Time:
70 ns
Rise Time:
24 ns
Resistance:
130 mΩ
Number of Pins:
3
Power Dissipation:
190 W
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
130 mΩ
Continuous Drain Current (ID):
25 A
Drain to Source Breakdown Voltage:
600 V
Numer modelu:
STB30NM60N
Wprowadzenie
STB30NM60N Overview\\nSTB30NM60N is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have STB30NM60N high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively. STB30NM60N is
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