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SI2308DS-T1-E3
Opis:
SI2308DS-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay / Siliconix stock available at Rozee
Kategoria:
Dyskretny półprzewodnik
Specyfikacje
Part Number:
SI2308DS-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
In stock. Alternative models available.
Lifecycle:
New from this manufacturer
Delivery:
DHL、UPS、FedEx、Registered Mail
Payment:
T/T Paypal Visa Western Union
More Information:
SI2308DS-T1-E3 More Information
ECAD:
Request Free CAD Models
Pricing(USD):
$0.00
Remark:
Manufacturer: Vishay / Siliconix.
Rozee is one of the Distributors.
Wide range of applications.
Mount:
Surface Mount
Height:
1.02 mm
Weight:
1.437803 g
Rise Time:
10 ns
Resistance:
160 mΩ
Number of Pins:
3
Power Dissipation:
1.25 W
Number of Channels:
1
Turn-On Delay Time:
7 ns
Element Configuration:
Single
Max Operating Temperature:
150 °C
Drain to Source Resistance:
160 mΩ
Continuous Drain Current (ID):
2 A
Drain to Source Breakdown Voltage:
60 V
Products Category:
Discrete Semiconductor - Transistors - FETs, MOSFETs - Single
Qty:
926 In Stock
Applications:
Building automation
Factory automation & control
Gaming
Width:
1.4 mm
Length:
3.04 mm
Fall Time:
10 ns
Rds On Max:
160 mΩ
Case/Package:
SOT-23-3
Input Capacitance:
240 pF
Threshold Voltage:
3 V
Number of Elements:
1
Turn-Off Delay Time:
17 ns
Max Power Dissipation:
1.25 W
Min Operating Temperature:
-55 °C
Gate to Source Voltage (Vgs):
20 V
Drain to Source Voltage (Vdss):
60 V
Numer modelu:
SI2308DS-T1-E3
Wprowadzenie
SI2308DS-T1-E3 Overview\\nSI2308DS-T1-E3 is a model belonging to the Transistors - FETs, MOSFETs - Single subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have SI2308DS-T1-E3 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our product more intuitively and comprehensively.
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